Name
Title | ||
|---|---|---|
8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology |
Abstract | ||
|---|---|---|
We report two 325 GHz series-connected power amplifiers (PAs) using 130 nm InP HBT technology. The unit cell, using two series-connected transistors, produces 8.6 mW at 325 GHz and consumes 243 mW DC power. The PA has a 4.3 dB compressed gain and 2.2% power added efficiency (PAE). Two of these cells are then power-combined, and two further cells are used as driver stages, to form the second design, which produces 11.36 mW at 325 GHz with 9.4 dB compressed gain and 1.09% PAE. The peak small signal gain is 16.6 dB at 325 GHz, and the 3-dB bandwidth is 9 GHz. The total power consumed is 1.12 W and the dimensions including the pads are 0.98 mm ×0.98 mm. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/BCICTS.2018.8550924 | 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
Stacked power amplifier,H-band power amplifier,mm-wave,Indium Phosphide | Conference | 978-1-5386-6503-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ahmed S. H. Ahmed | 1 | 0 | 1.69 |
| Arda Simsek | 2 | 0 | 0.34 |
| M. Urteaga | 3 | 16 | 7.43 |
| Mark J. W. Rodwell | 4 | 0 | 0.34 |