Name
Abstract | ||
|---|---|---|
This paper presents single and dual output 40 W Ka-Band GaN MMIC PAs fabricated on 50 μm SiC using Qorvo's QGaN15 released process. The single output PA produces approximately 40 W of output power over the 27.5 - 29.5 GHz band and greater than 30W over the 26.5 - 31 GHz band with greater than 20 % PAE. A balanced PA architecture is selected resulting in return losses greater than 15 dB in fixture. The PA exhibits less than 0.3 dB power droop over a 5 ms pulse width. Design choices minimizing the performance degradation due to process variation are discussed. A dual output PA integrated with an input SPDT switch and output isolation circuitry is also detailed. This variant allowing the output signal to be routed to one of two selectable outputs without requiring large output switch devices is presented with preliminary measured results. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/BCICTS.2018.8551075 | 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
single output PA,balanced PA architecture,dual output PA,output isolation circuitry,Ka-band GaN MMIC PA,MMIC power amplifiers,Qorvo QGaN15 released process,input SPDT switch,frequency 26.5 GHz to 31.0 GHz,size 50.0 mum,GaN,SiC | Conference | 978-1-5386-6503-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Michael Roberg | 1 | 0 | 0.68 |
| Thi Ri Mya Kywe | 2 | 0 | 0.34 |
| Matthew Irvine | 3 | 0 | 0.34 |
| Orlando Marrufo | 4 | 0 | 0.34 |
| Sabyasachi Nayak | 5 | 0 | 0.34 |