Name
Title | ||
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High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology |
Abstract | ||
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Compact high gain 220 to 275 GHz millimeter wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a metamorphic 20 nm gate length InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. Therefore, an Al
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layer stack was deposited as a gate dielectric directly on top of an In
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Ga
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As channel by atomic layer deposition. The gate layout was optimized for millimeter wave and submillimeter wave integrated circuit applications using T-gates and wet chemical recess etching to minimize the parasitic gate capacitances. For a 2×10 μm gate width transistor, a transit frequency fT of 275 GHz and a record maximum oscillation frequency fmax of 640 GHz was extrapolated. A realized three-stage cascode amplifier circuit demonstrated a maximum gain of 21 dB at 263 GHz and a small-signal gain of more than 18 dB between 222 and 274 GHz. The total chip size of the millimeter wave amplifier MMIC was only 0.5×1.2 mm
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. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/BCICTS.2018.8550836 | 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
atomic layer deposition (ALD),H-band,InGaAs metal-oxide-semi-conductor field-effect transistor (InGaAs MOSFET),low-noise amplifier (LNA),metamorphic high electron mobility transistor (mHEMT),millimeter wave monolithic integrated circuit (MMIC) | Conference | 978-1-5386-6503-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Axel Tessmann | 1 | 17 | 6.86 |
| Arnulf Leuther | 2 | 0 | 0.68 |
| F. Heinz | 3 | 0 | 0.34 |
| Frank Bernhardt | 4 | 0 | 0.34 |
| Hermann Massler | 5 | 0 | 0.68 |