Name
Abstract | ||
|---|---|---|
In this paper we review the status of the state-of-the-art and our transition activities for mm-wave, D-, and G-band solid-state power amplifier (PA) MMICs developed into Teledyne Scientific's 250-nm InP HBT technology. Key design decisions driven by the transistor gain at a given frequency and large-signal load-line are reviewed. Novel PA cell topologies are presented to show how they address the high current biasing required of the 250-nm InP HBT and permit 2× and 4× on-chip combining. PA wafer-mapping by auto-probing on a full thickness 100-mm wafer prior to finishing (thinning to 3-mil, chip singulation) permits the RF identification of known-good-die (KGD) and thus an inventory of parts can be generated. Five established 250-nm InP HBT power amplifiers are presented operating from 55-135 GHz (115-135 mW), 60-130 GHz (160-275 mW), 115-145 GHz (0.25-W @ 140-GHz), 115-185 GHz (75-115 mW), and 180-250 GHz (40-80 mW). Also, included is a novel 190-GHz low-power driver amplifier (high-gain, 100-mW P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DC</sub>
, 3-dBm OP
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub>
, 11-dBm P
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with 9.6% PAE). |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/BCICTS45179.2019.8972777 | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
solid-state power amplifier,power amplifier,InP HBT,D-band,G-band | Conference | 978-1-7281-0587-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zach Griffith | 1 | 0 | 0.34 |
| M. Urteaga | 2 | 16 | 7.43 |
| Petra Rowell | 3 | 0 | 0.34 |
| Lan Tran | 4 | 0 | 0.34 |
| Bobby Brar | 5 | 0 | 0.34 |