Name
Title | ||
|---|---|---|
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology |
Abstract | ||
|---|---|---|
This work presents the design of a power amplifier (PA) with an AC-coupled common-emitter and common-base stage in a 130 nm SiGe BiCMOS technology. The amplifier operates in the D-band and consists of two driving stages followed by an output power stage. At 143 GHz a small signal gain of 39.8 dB and a maximum saturated output power (P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub>
) of 16 dBm is achieved. The PAE peak value is 5.4 %, while the chip draws 220 mA from a 3.3 V power supply. Including pads the chip consumes an area of 0.66 mm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
. To the best of the authors' knowledge this is the highest value for P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub>
reported in this frequency range using silicon-based technologies. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/BCICTS45179.2019.8972772 | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
power amplifier,millimeter-wave,SiGe BiCMOS | Conference | 978-1-7281-0587-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Badou Sene | 1 | 0 | 0.34 |
| Herbert Knapp | 2 | 0 | 0.34 |
| Hao Li | 3 | 0 | 0.34 |
| Jonas Kammerer | 4 | 0 | 0.34 |
| Soran Majied | 5 | 0 | 0.34 |
| Klaus Aufinger | 6 | 0 | 1.01 |
| Jonas Fritzin | 7 | 0 | 0.68 |
| Daniel Reiter | 8 | 0 | 0.34 |
| Nils Pohl | 9 | 40 | 12.98 |