Title | ||
---|---|---|
Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications |
Abstract | ||
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GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 μm were achieved; for detector, spectral cut-off was measured at 3.6 μm. |
Year | DOI | Venue |
---|---|---|
2019 | 10.1109/BCICTS45179.2019.8972759 | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
GeSn,laser,photodetector,mid-infrared,integrated photonics | Conference | 978-1-7281-0587-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
12 |
Name | Order | Citations | PageRank |
---|---|---|---|
Shui-Qing Yu | 1 | 0 | 0.34 |
Yiyin Zhou | 2 | 0 | 0.34 |
Huong Tran | 3 | 0 | 0.34 |
Baohua Li | 4 | 34 | 5.57 |
Seyed Ghetmiri | 5 | 0 | 0.34 |
Aboozar Mosleh | 6 | 0 | 0.34 |
Mansour Mortazavi | 7 | 0 | 0.34 |
Wei Du | 8 | 0 | 0.34 |
Greg Sun | 9 | 0 | 0.34 |
Richard A. Soref | 10 | 0 | 0.34 |
Joe Margetis | 11 | 0 | 0.34 |
Baohua Li | 12 | 0 | 1.69 |