Title
Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications
Abstract
GeSn DHS and QW lasers and photoconductors have been investigated. For laser, the maximum operation temperature of 270 K and wavelength of 3.5 μm were achieved; for detector, spectral cut-off was measured at 3.6 μm.
Year
DOI
Venue
2019
10.1109/BCICTS45179.2019.8972759
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Keywords
DocType
ISBN
GeSn,laser,photodetector,mid-infrared,integrated photonics
Conference
978-1-7281-0587-1
Citations 
PageRank 
References 
0
0.34
0
Authors
12
Name
Order
Citations
PageRank
Shui-Qing Yu100.34
Yiyin Zhou200.34
Huong Tran300.34
Baohua Li4345.57
Seyed Ghetmiri500.34
Aboozar Mosleh600.34
Mansour Mortazavi700.34
Wei Du800.34
Greg Sun900.34
Richard A. Soref1000.34
Joe Margetis1100.34
Baohua Li1201.69