Paper Info
Title
Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS
Abstract
This paper presents an ultra broadband low-power single-ended to differential active balun. The balun has been fabricated using IHP SG13S SiGe 130-nm BiCMOS technology, which features an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> of 250 GHz and an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 340 GHz. Conversely to other works, the designed circuit is based exclusively on two transistors in common-emitter and common-base configuration, fed by a current source with a high output impedance. Moreover, the design does not employ inductors accommodating a compact form-factor. A theoretical analysis demonstrates a single-ended to single-ended identical gain in amplitude for both outputs with opposite phase. Small-signal measurements validate the proposed work up to 70 GHz achieving a maximum phase and amplitude imbalance of 3.2° and 0.65 dB, respectively. Furthermore, a peak gain of 2.3 dB and a 3-dB bandwidth of 57 GHz are shown. Large-signal measurements show an input 1-dB compression point (IP1dB) better than -7dBm along the whole 3-dB bandwidth, together with a power consumption of 37 mW. The occupied silicon area is 0.42 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , pads included.
Year
DOI
Venue
2020
10.1109/BCICTS48439.2020.9392960
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Keywords
DocType
ISBN
Active balun,5G,SiGe,BiCMOS,bandwidth,single-ended,differential,broadband design,phase imbalance
Conference
978-1-7281-9750-0
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Aniello Franzese100.34
Mohamed Hussein Eissa2143.96
Thomas Mausolf300.68
D Kissinger432.43
Renato Negra500.34
Andrea Malignaggi601.01