Title | ||
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A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications |
Abstract | ||
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This paper describes a Ku-band 70-W class GaN internally matched high power amplifier (HPA) with wide offset frequencies of up to 400 MHz for multi-carrier satellite communications. Our proposed output matching circuit uses three different kinds of difference-frequency short-circuits for realizing the wide offset frequency operation; two of the three are embedded into a tournament-shaped output matching circuit inside the HPA package and the rest is embedded into the drain bias feed placed outside the package. In order to verify the short-circuit design and its effectiveness, the Ku-band GaN HPA was designed, fabricated, and measured. The measurement shows that the HPA achieves a peak output power of 48.6 dBm while keeping a linear output power of over 40 dBm and -26-dBc IMD3 over wide offset frequencies of up to 400 MHz. To the authors' knowledge, this HPA has the record linearity of the 400-MHz wide offset frequencies and low IMD3 of less than -25 dBc among the ever reported Ku-band GaN HPAs for multi-carrier satellite communications. |
Year | DOI | Venue |
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2020 | 10.1109/BCICTS48439.2020.9392968 | 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
gallium nitride,high power amplifier,Ku-band,intermodulation distortion,satellite communication,multicarrier | Conference | 978-1-7281-9750-0 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 |
Name | Order | Citations | PageRank |
---|---|---|---|
Takaaki Yoshioka | 1 | 0 | 0.34 |
Kenji Harauchi | 2 | 0 | 0.34 |
Takumi Sugitani | 3 | 0 | 0.34 |
Takashi Yamasaki | 4 | 0 | 0.34 |
Hiroaki Ichinohe | 5 | 0 | 0.34 |
Miyo Miyashita | 6 | 0 | 0.34 |
Kazuya Yamamoto | 7 | 0 | 0.34 |
Seiki Goto | 8 | 0 | 0.34 |