Abstract | ||
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Emerging non-volatile memory (NVM) technologies with computation capabilities have heralded a new era of non- Von Neumann computing models. Redox-based Resistive RAM (ReRAM) is a prominent NVM technology, which offers high density, low leakage power and ability to perform functionally complete set of Boolean operations. Multiple implementations with ReRAM have been used to demonstrate the benefit ... |
Year | DOI | Venue |
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2021 | 10.1109/VLSID51830.2021.00013 | 2021 34th International Conference on VLSI Design and 2021 20th International Conference on Embedded Systems (VLSID) |
Keywords | DocType | ISSN |
Nonvolatile memory,Architecture,Computational modeling,Resistive RAM,Authentication,Parallel processing,Very large scale integration | Conference | 1063-9667 |
ISBN | Citations | PageRank |
978-1-6654-4087-5 | 0 | 0.34 |
References | Authors | |
0 | 3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Debjyoti Bhattacharjee | 1 | 0 | 0.34 |
Anirban Majumder | 2 | 0 | 0.34 |
Anupam Chattopadhyay | 3 | 6 | 4.23 |