Title
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications
Abstract
RF reliability at 28GHz in PAFETs under constant and varying output load (Z0) was evaluated. Time domain analyses show that in addition to non-conducting TDDB (ncTDDB), both conducting (cHCI) and non-conducting Hot Carrier Injection (ncHCI) degradation play key roles as primary mechanisms. RF power as stress variable under linear, P1dB and compression shows higher degradation in compression attrib...
Year
DOI
Venue
2021
10.1109/IRPS46558.2021.9405220
2021 IEEE International Reliability Physics Symposium (IRPS)
Keywords
DocType
ISSN
Radio frequency,Degradation,5G mobile communication,Power amplifiers,Integrated circuit reliability,Integrated circuit modeling,Time-domain analysis
Conference
1541-7026
ISBN
Citations 
PageRank 
978-1-7281-6893-7
0
0.34
References 
Authors
0
13
Name
Order
Citations
PageRank
P. Srinivasan100.34
F. Guarin200.34
S. Syed300.34
J. A. S. Jerome400.34
W. Liu500.34
S. Jain600.34
D. Lederer700.34
S. Moss800.34
P. Colestock900.34
A. Bandyopadhyay1000.34
N. Cahoon1100.34
B. Min1200.34
M. Gall1300.34