Title
Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing
Abstract
In this paper, we investigate the relaxation effects on multi-level resistive random access memory (RRAM) based in-memory computing (IMC) for deep neural network (DNN) inference. We characterized 2-bit-per-cell RRAM IMC prototypes and measured the relaxation effects over 100 hours on multiple 8 kb test chips, where the relaxation is found to be most severe in the two intermediate states. We incorp...
Year
DOI
Venue
2021
10.1109/IRPS46558.2021.9405228
2021 IEEE International Reliability Physics Symposium (IRPS)
Keywords
DocType
ISSN
Training,Semiconductor device measurement,Neural networks,Resistive RAM,Prototypes,SPICE,Stability analysis
Conference
1541-7026
ISBN
Citations 
PageRank 
978-1-7281-6893-7
0
0.34
References 
Authors
0
7
Name
Order
Citations
PageRank
Wangxin He100.34
Wonbo Shim211.69
Shihui Yin37110.03
Xiaoyu Sun49516.54
Deliang Fan500.34
Shimeng Yu651.94
Jae-sun Seo753656.32