Title
Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control
Abstract
Resistive memory (RRAM) provides an ideal platform to develop embedded non-volatile computing-in-memory (nvCIM). However, it faces several critical challenges ranging from device non-idealities, large DC currents, and small signal margins. To address these issues, we propose voltage-division (VD) based computing approach and its circuit implementation in two-transistor-two-resistor (2T2R) RRAM cel...
Year
DOI
Venue
2021
10.1109/TCSII.2021.3067385
IEEE Transactions on Circuits and Systems II: Express Briefs
Keywords
DocType
Volume
Sensors,Optical wavelength conversion,Resistance,Neural networks,Silicon,Memory management,Circuits and systems
Journal
68
Issue
ISSN
Citations 
5
1549-7747
4
PageRank 
References 
Authors
0.44
0
12
Name
Order
Citations
PageRank
Linfang Wang1145.93
Wang Ye240.44
Chunmeng Dou352.15
Xin Si4496.86
Xiaoxin Xu540.44
Jing Liu641.11
Dashan Shang752.27
Jianfeng Gao861.15
Feng Zhang940.44
Yongpan Liu10105684.55
mengfan chang116214.41
Hangbing Lv1242.46