Title
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation
Abstract
RRAM is a promising candidate for compute-in-memory (CIM) applications owing to its natural multiply-and-accumulate (MAC)-supporting structure, high bit-density, non-volatility, and a monolithic CMOS and RRAM process. In particular, multi-bit encoding in RRAM cells helps support advanced applications such as AI with higher MAC throughput and bit-density. Notwithstanding prior efforts into commerci...
Year
DOI
Venue
2021
10.1109/CICC51472.2021.9431412
2021 IEEE Custom Integrated Circuits Conference (CICC)
Keywords
DocType
ISBN
Resistance,Conferences,Throughput,Encoding,Common Information Model (computing),Iterative methods,Convolutional neural networks
Conference
978-1-7281-7581-2
Citations 
PageRank 
References 
2
0.37
0
Authors
6
Name
Order
Citations
PageRank
Jong-Hyeok Yoon151.79
Muya Chang252.11
Win-San Khwa3295.14
Yu-Der Chih451.79
Meng-Fan Chang521.05
Arijit Raychowdhury651471.77