Paper Info
Title
A new 1P1R Image Sensor with In-Memory Computing Properties based on Silicon Nitride Devices
Abstract
Research progress in edge computing hardware, capable of demanding in-the-field processing tasks with simultaneous memory and low power properties, is leading the way towards a revolution in IoT hardware technology. Resistive random access memories (RRAM) are promising candidates for replacing current non-volatile memories and realize storage class memories, but also due to their memristive nature they are the perfect candidates for in-memory computing architectures. In this context, a CMOS compatible silicon nitride (SiN) device with memristive properties is presented accompanied by a data-fitted model extracted through analysis of measured resistance switching dynamics. Additionally, a new phototransistor-based image sensor architecture with integrated SiN memristor (1P1R) was presented. The in-memory computing capabilities of the 1P1R device were evaluated through SPICE-level circuit simulation with the previous presented device model. Finally, the fabrication aspects of the sensor are discussed.
Year
DOI
Venue
2021
10.1109/ISCAS51556.2021.9401586
2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
Keywords
DocType
ISSN
resistive random access memory (RRAM), resistance switching, silicon nitride, memristor, BJT, image sensor, phototransistor, crossbar, in-memory computing, edge computing, dot product engine, IoT, SPICE
Conference
0271-4302
Citations 
PageRank 
References 
0
0.34
0
Authors
9
Name
Order
Citations
PageRank
Nikolaos Vasileiadis101.69
Vasileios Ntinas201.01
Iosif-Angelos Fyrigos303.38
Rafailia-Eleni Karamani401.35
Vassilios Ioannou-Sougleridis500.34
Normand, P.601.01
Ioannis Karafyllidis725834.31
Sirakoulis Georgios Ch.830660.41
Panagiotis Dimitrakis902.37