Name
Abstract | ||
|---|---|---|
In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by crystal plane etching. The etching rate of the crystal plane is reasonably slow as it is only 1/45 of the etching rate, thus allowing and therefore good slits-opening controllability. By slowly etching the ... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/NEMS51815.2021.9451489 | 2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) |
Keywords | DocType | ISSN |
Fabrication,Wet etching,Nanoelectromechanical systems,Conferences,Crystals,Controllability,Nonhomogeneous media | Conference | 2474-3747 |
ISBN | Citations | PageRank |
978-1-6654-1941-3 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hao Hong | 1 | 0 | 0.34 |
| Li Ye | 2 | 0 | 0.34 |
| Ke Li | 3 | 0 | 0.34 |
| Pasqualina M. Sarro | 4 | 0 | 0.34 |
| G.Q. Zhang | 5 | 136 | 51.65 |
| Zewen Liu | 6 | 2 | 5.78 |