Name
Abstract | ||
|---|---|---|
GaN vertical finFETs are capable of high breakdown voltages and large current density without the need for regrowth or p-type doping. These attributes make them a promising candidate for next-generation high-frequency power applications. Here, we demonstrate the first high frequency characterization of vertical GaN finFETs. These devices utilize a highly insulating sapphire substrate and a quasi-v... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/DRC52342.2021.9467133 | 2021 Device Research Conference (DRC) |
DocType | ISBN | Citations |
Conference | 978-1-6654-1240-7 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Joshua A. Perozek | 1 | 0 | 0.34 |
| Ahmad Zubair | 2 | 0 | 0.34 |
| Tomas Palacios | 3 | 1 | 2.71 |