Name
Abstract | ||
|---|---|---|
An L g = 40 nm, t ch = 7.0 nm In 0.53 Ga 0.47 As / InAs MOS-HEMT exhibiting f t = 420 GHz and f max = 562 GHz at V DS = 0.70 V, V GS = 0.30 V, and I DS = 0.793 mA/µm is reported. A 0.83 nm / 1.71 nm Al x O y N z / ZrO 2 high-k gate dielectric is used with a 3.0 / 4.0 nm In 0.53 Ga 0.47 As / InAs composite channel. At 40 nm L g , high peak g m,e = 2.9 mS/µm and record low g ds,e = 0.18 mS/µm at V D... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/DRC52342.2021.9467208 | 2021 Device Research Conference (DRC) |
DocType | ISBN | Citations |
Conference | 978-1-6654-1240-7 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Brian Markman | 1 | 0 | 0.34 |
| Simone Tommaso Šuran Brunelli | 2 | 0 | 0.34 |
| Matthew Guidry | 3 | 0 | 0.34 |
| Logan Whitaker | 4 | 0 | 0.34 |
| Mark J.W. Rodwell | 5 | 0 | 0.34 |