Name
Abstract | ||
|---|---|---|
Lateral GaN-based transistors (HEMTs) for power-electronic switching up to 650 V have not yet approached their theoretical material limit in terms of R ON A vs. V Br – unlike Si and SiC based devices. The inherent compromise between breakdown strength and dispersion by the usually required GaN-buffer compensation doping is one reason. Related dispersion effects should be absent when using AlN with... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/DRC52342.2021.9467164 | 2021 Device Research Conference (DRC) |
DocType | ISBN | Citations |
Conference | 978-1-6654-1240-7 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Oliver Hilt | 1 | 0 | 0.34 |
| Frank Brunner | 2 | 0 | 0.34 |
| Eldad Bahat Treidel | 3 | 0 | 0.34 |
| Mihaela Wolf | 4 | 0 | 0.34 |
| Joachim Würfl | 5 | 0 | 0.34 |