A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

Paper Info

Title
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

Abstract
This paper presents a low-random noise of 2.6 e-rms, a low-power of 116.2 mW at video rate, and a high-speed up to 960 fps 2-mega pixels global-shutter type CMOS image sensor (CIS) using an advanced DRAM technology. To achieve a high performance global-shutter CIS, we proposed a novel architecture for the digital pixel sensor which is a remarkable global-shutter operation CIS with a pixel-wise ADC and an in-pixel digital memory. Each pixel has two small-pitch Cu-to-Cu interconnectors for the wafer-level stacking, and the pitch of each unit pixel is less than 5 μm which is the world’s smallest pixel embedding both pixel-level ADC and 22-bit memories.

Year	DOI	Venue
2021	10.23919/VLSICircuits52068.2021.9492357	2021 Symposium on VLSI Technology
DocType	ISSN	ISBN
Conference	0743-1562	978-1-6654-3009-8
Citations	PageRank	References
0	0.34	0
Authors
25

Authors (25 rows)

Cited by (0 rows)

References (0 rows)

Name	Order	Citations	PageRank
Min-Woong Seo	1	1	1.03
Myunglae Chu	2	0	0.34
Hyun-Yong Jung	3	0	0.34
Suksan Kim	4	0	0.34
Jiyoun Song	5	1	1.03
Junan Lee	6	0	0.34
Yong-sung Kim	7	310	28.97
Jongyeon Lee	8	0	0.34
Sung-Jae Byun	9	0	0.34
Daehee Bae	10	0	0.34
Minkyung Kim	11	0	0.34
Gwi-Deok Lee	12	0	0.34
Heesung Shim	13	0	0.34
Changyong Um	14	0	0.34
Changhwa Kim	15	0	0.34
In-Gyu Baek	16	1	1.03
Doowon Kwon	17	0	1.35
hongki kim	18	1	0.69
Hyuksoon Choi	19	0	0.34
Jonghyun Go	20	0	0.34
JungChak Ahn	21	0	0.34
Jaekyu Lee	22	1	1.03
Changrok Moon	23	0	0.34
Kyupil Lee	24	1	1.37
Hyoung-Sub Kim	25	0	0.34