Name
Abstract | ||
|---|---|---|
This paper presents the design and simulation of a broadband two-stage power amplifier (PA) in 0.13 μm SiGe BiCMOS that is applicable to ISM band applications at 60 GHz, and E−band applications (71–76 GHz, 77 GHz, 81–86 GHz, and 92–95 GHz). The driver stage utilizes a cascode with a novel shunt-shunt feedback structure to maximize the gain, while a dual Y current transmission line divider and combiner are designed and optimized in the inter-stage and output matching of the second stage, respectively, to maximize the output power and power added efficiency (PAE). Based on the proposed approach and staggered tuning technique, the post-layout simulation results demonstrate 18 dB power gain with 2 dB ripple through the operating band. Additionally, the PA achieves average PAE and saturated output power of 19%, and 16 dBm, respectively, over the whole band. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1016/j.mejo.2021.105128 | Microelectronics Journal |
Keywords | DocType | Volume |
W-band,Power amplifier (PA),Power added efficiency (PAE),Radar,BiCMOS,SiGe,Millimeter-wave (mm–wave) | Journal | 114 |
ISSN | Citations | PageRank |
0026-2692 | 0 | 0.34 |
References | Authors | |
0 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hamed Mosalam | 1 | 0 | 0.34 |
| Quan Pan | 2 | 3 | 4.11 |