Name
Abstract | ||
|---|---|---|
The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter-detector pair operation modalities, including spectroscopy and imaging. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.3390/s21175795 | SENSORS |
Keywords | DocType | Volume |
opto-pair, CMOS, voltage-controlled oscillator, THz detection, THz imaging, field-effect transistor | Journal | 21 |
Issue | ISSN | Citations |
17 | 1424-8220 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kestutis Ikamas | 1 | 0 | 0.34 |
| Dmytro B. But | 2 | 0 | 1.35 |
| Albert Cesiul | 3 | 0 | 0.34 |
| Cezary Kolacinski | 4 | 0 | 0.34 |
| Tautvydas Lisauskas | 5 | 0 | 0.68 |
| Wojciech Knap | 6 | 36 | 10.83 |
| Alvydas Lisauskas | 7 | 33 | 9.18 |