Name
Abstract | ||
|---|---|---|
Emerging non-volatile memories, such as resistive random access memory (RRAM) and magnetic RAM (MRAM) can scale smaller than NOR flash in embedded devices and is replacing NOR used for code storage for devices with less than 28nm feature sizes. In addition, MRAM, with performance as good as higher-level SRAM cache and with a cell size much smaller than SRAM with its 6 transistors allows creating m... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/MCE.2021.3095049 | IEEE Consumer Electronics Magazine |
Keywords | DocType | Volume |
Random access memory,Nonvolatile memory,Magnetic tunneling,Consumer electronics,Three-dimensional displays,Memory management,Magnetic resonance imaging | Journal | 10 |
Issue | ISSN | Citations |
6 | 2162-2248 | 0 |
PageRank | References | Authors |
0.34 | 0 | 1 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Coughlin, T. | 1 | 13 | 20.69 |