Name
Title | ||
|---|---|---|
Proposal of Analog In-Memory Computing With Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell |
Abstract | ||
|---|---|---|
In-memory computing (IMC) is an effective solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with an analog-to-digital converter (ADC) and simultaneously completes the calculation of multi-line data with a high parallelism degree. Based on a universal one-transistor one-magnetic tunnel junction (MTJ) spin tr... |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/TCSI.2022.3140769 | IEEE Transactions on Circuits and Systems I: Regular Papers |
Keywords | DocType | Volume |
Magnetic tunneling,Nonvolatile memory,Random access memory,Voltage,Resistance,Power demand,Perpendicular magnetic anisotropy | Journal | 69 |
Issue | ISSN | Citations |
4 | 1549-8328 | 3 |
PageRank | References | Authors |
0.38 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hao Cai | 1 | 60 | 21.94 |
| Y Q Guo | 2 | 4 | 1.83 |
| Bo Liu | 3 | 10 | 4.67 |
| Mingyang Zhou | 4 | 3 | 0.38 |
| Juntong Chen | 5 | 4 | 1.43 |
| Xinning Liu | 6 | 3 | 0.38 |
| Jun Yang | 7 | 147 | 36.54 |