Name
Abstract | ||
|---|---|---|
Magnetic tunnel junction (MTJ) with non-volatility, and near-zero leakage power features are believed to be the most prominent candidates for CMOS substitution. Logic-in-memory reduces the memory wall challenge and takes advantage of these features, but still has the challenge of writing to a magnetic device with regard to power consumption and device failure. Considering these challenges, we prop... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TCSI.2021.3106017 | IEEE Transactions on Circuits and Systems I: Regular Papers |
Keywords | DocType | Volume |
Magnetic tunneling,Switches,Approximate computing,Transistors,Nonvolatile memory,Power demand,Magnetic anisotropy | Journal | 68 |
Issue | ISSN | Citations |
11 | 1549-8328 | 0 |
PageRank | References | Authors |
0.34 | 0 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ali Zarei | 1 | 0 | 0.34 |
| Farshad Safaei | 2 | 95 | 19.37 |