Title | ||
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MBE-Grown Ge 0.92 Sn 0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge 0.92 Sn 0.08 Substrate |
Abstract | ||
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The binary alloy semiconductor $\text{Ge}_{1-\mathrm{x}}\text{Sn}_{\mathrm{x}}$ is a promising candidate for the monolithic integration of optoelectronic circuits on Si due to its reported direct bandgap at specific Sn concentration and strain. However, while the directness of $\text{Ge}_{1-\mathrm{x}}\text{Sn}_{\mathrm{x}}$ improves with increasing Sn concentration, compress... |
Year | DOI | Venue |
---|---|---|
2021 | 10.23919/MIPRO52101.2021.9596634 | 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) |
Keywords | DocType | ISBN |
X-ray scattering,Molecular beam epitaxial growth,Crystals,Germanium,Silicon,Semiconductor diodes,Current density | Conference | 978-953-233-101-1 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
10 |
Name | Order | Citations | PageRank |
---|---|---|---|
udo d schwarz | 1 | 3 | 2.29 |
S. C. Schäfer | 2 | 1 | 0.63 |
L. Seidel | 3 | 1 | 0.63 |
H. S. Funk | 4 | 1 | 1.30 |
D. Weißhaupt | 5 | 1 | 0.63 |
Michael Oehme | 6 | 2 | 3.95 |
V. Schlykow | 7 | 1 | 0.63 |
V. Kiyek | 8 | 1 | 0.63 |
D. Buca | 9 | 1 | 0.63 |
J. Schulze | 10 | 2 | 4.97 |