Title
MBE-Grown Ge 0.92 Sn 0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge 0.92 Sn 0.08 Substrate
Abstract
The binary alloy semiconductor $\text{Ge}_{1-\mathrm{x}}\text{Sn}_{\mathrm{x}}$ is a promising candidate for the monolithic integration of optoelectronic circuits on Si due to its reported direct bandgap at specific Sn concentration and strain. However, while the directness of $\text{Ge}_{1-\mathrm{x}}\text{Sn}_{\mathrm{x}}$ improves with increasing Sn concentration, compress...
Year
DOI
Venue
2021
10.23919/MIPRO52101.2021.9596634
2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Keywords
DocType
ISBN
X-ray scattering,Molecular beam epitaxial growth,Crystals,Germanium,Silicon,Semiconductor diodes,Current density
Conference
978-953-233-101-1
Citations 
PageRank 
References 
1
0.63
0
Authors
10
Name
Order
Citations
PageRank
udo d schwarz132.29
S. C. Schäfer210.63
L. Seidel310.63
H. S. Funk411.30
D. Weißhaupt510.63
Michael Oehme623.95
V. Schlykow710.63
V. Kiyek810.63
D. Buca910.63
J. Schulze1024.97