Name
Title | ||
|---|---|---|
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy |
Abstract | ||
|---|---|---|
Strained modulation-doped quantum wells (QW) offer a huge potential for semiconductor device applications due to their high mobility. The material Ge is particularly interesting here, exhibiting the highest bulk hole-mobility of all known semiconductors. However, the growth for Ge QW structures is quite complex and a special virtual substrate (VS) technique is needed. The VS is commonly grown with... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.23919/MIPRO52101.2021.9597145 | 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) |
Keywords | DocType | ISBN |
Buffer layers,Temperature measurement,Temperature,Semiconductor devices,Molecular beam epitaxial growth,Doping,Germanium | Conference | 978-953-233-101-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| E. Sigle | 1 | 0 | 0.34 |
| D. Weißhaupt | 2 | 0 | 0.34 |
| Michael Oehme | 3 | 2 | 3.95 |
| H. S. Funk | 4 | 0 | 0.34 |
| udo d schwarz | 5 | 3 | 2.29 |
| F. Berkmann | 6 | 0 | 0.34 |
| J. Schulze | 7 | 2 | 4.97 |