Title
Inp-Based Photodetectors Monolithically Integrated With 90 Degrees Hybrid Toward Over 400 Gb/S Coherent Transmission Systems
Abstract
We present InP-based photodetectors monolithically integrated with a 90 degrees hybrid toward over 400 Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40 GHz for 400 Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600 Gb/s DP-64QAM through 64 GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90 degrees hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530 nm - 1570 nm) operation indicated the wide 3-dB bandwidth of more than 40 GHz and the high receiver responsivity of more than 0.070 A/W (Chip responsivity within the C-band: 0.130 A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90 degrees hybrid optimized for the L-band (1565 nm - 1612 nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120 A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90 degrees hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90 degrees hybrid and four-channel p-i-n photodiodes.
Year
DOI
Venue
2019
10.1587/transele.2018ODI0006
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
DocType
Volume
digital coherent transmission, InP, 90 degrees hybrid, multimode interference structure, p-i-n photodiode
Journal
E102C
Issue
ISSN
Citations 
4
1745-1353
0
PageRank 
References 
Authors
0.34
0
15