Name
Title | ||
|---|---|---|
Comparative Study Of Electro-Thermal Characteristics Of 4500 V Diffusion-Cs Igbt And Buried-Cs Igbt |
Abstract | ||
|---|---|---|
This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS-IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS-IGBT). In the DCS-IGBT, an N-well is formed by phosphorus ion implantation and drive-in for creating the CS layer, whereas, in the BCS-IGBT, the CS layer is formed by forming a buried layer implant followed by growing an epitaxial layer. It is found that, at blocking voltage of 5700 V, the BCS-IGBT achieves an on-state voltage, V-CEsat, of 2.04 V at a current density of 75 A/cm(2) for a gate voltage of 15 V. Under the same conditions, the on-state voltage of DCS-IGBT is 2.32 V, which is about 0.28 V higher than that of the BCS-IGBT at room temperature. Additionally, at 125 degrees C the V-CEsat of the DCS-IGBT is about 0.38 V higher than that of the BCS-IGBT. TCAD simulations are employed to investigate and explain the electro-thermal characteristics differences between these two devices. Furthermore, the ruggedness of the both devices are studied and compared. It is found that the DCS-IGBT is more rugged than BCS-IGBT, for example the short-circuit withstanding time (SCWT) of DCS-IGBT and BCS-IGBT are 22 and 16 mu s, respectively. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1049/cds2.12022 | IET CIRCUITS DEVICES & SYSTEMS |
DocType | Volume | Issue |
Journal | 15 | 3 |
ISSN | Citations | PageRank |
1751-858X | 0 | 0.34 |
References | Authors | |
0 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Rui Jin | 1 | 0 | 0.34 |
| Yaohua Wang | 2 | 0 | 0.34 |
| Li Li | 3 | 0 | 0.34 |
| Longlai Xu | 4 | 0 | 0.34 |
| Kui Pu | 5 | 0 | 0.34 |
| Jun Zeng | 6 | 0 | 0.34 |
| Mohamed Darwish | 7 | 0 | 0.34 |