Abstract | ||
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In this study, we describe combustion-processed high-quality Li-AlOx thin films and their implementation in In-2O3 synaptic transistors by a low temperatures (300 °C) water-based method. The resulting synaptic transistors presented a superior electrical performance at a low operating voltage of 3 V, with a positive threshold voltage of 0.5 V, a subthreshold swing o... |
Year | DOI | Venue |
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2021 | 10.1109/ICICDT51558.2021.9626483 | 2021 International Conference on IC Design and Technology (ICICDT) |
Keywords | DocType | ISSN |
Synaptic transistor,Metal oxide,High-k dielectric,Solution process | Conference | 2381-3555 |
ISBN | Citations | PageRank |
978-1-6654-4998-4 | 0 | 0.34 |
References | Authors | |
0 | 10 |