Name
Title | ||
|---|---|---|
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers |
Abstract | ||
|---|---|---|
In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behav... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/ICICDT51558.2021.9626507 | 2021 International Conference on IC Design and Technology (ICICDT) |
Keywords | DocType | ISSN |
synaptic behaviors,pattern recognition,MXene,RRAM | Conference | 2381-3555 |
ISBN | Citations | PageRank |
978-1-6654-4998-4 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zongjie Shen | 1 | 0 | 0.34 |
| Chun Zhao | 2 | 0 | 0.34 |
| Ivona Z Mitrovic | 3 | 0 | 0.68 |
| Cezhou Zhao | 4 | 0 | 0.34 |
| Yina Liu | 5 | 0 | 2.03 |
| Li Yang | 6 | 0 | 0.34 |