Abstract | ||
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This paper discusses the effect of back-end of line (BEOL) process on cell performance for a Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM). The impact of BEOL is first shown by describing the microscopic evolution of the active Ge-rich GST alloy during process. Ge clustering has been proven to occur during the fabrication process, impacting the pristine resistance and the after for... |
Year | DOI | Venue |
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2021 | 10.1109/ESSDERC53440.2021.9631807 | ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) |
Keywords | DocType | ISSN |
Resistance,Performance evaluation,Microscopy,Memory management,Europe,Reliability engineering,Germanium | Conference | 1930-8876 |
ISBN | Citations | PageRank |
978-1-6654-3748-6 | 1 | 0.63 |
References | Authors | |
0 | 37 |
Name | Order | Citations | PageRank |
---|---|---|---|
A. Redaelli | 1 | 1 | 0.96 |
A. Gandolfo | 2 | 3 | 1.12 |
G. Samanni | 3 | 1 | 0.63 |
E. Gomiero | 4 | 1 | 0.63 |
E. Petroni | 5 | 1 | 0.63 |
L. Scotti | 6 | 1 | 0.63 |
A. Lippiello | 7 | 1 | 0.63 |
P. Mattavelli | 8 | 1 | 0.63 |
J. Jasse | 9 | 1 | 0.63 |
D. Codegoni | 10 | 1 | 0.63 |
A. Serafini | 11 | 1 | 0.63 |
R. Ranica | 12 | 1 | 0.63 |
C. Boccaccio | 13 | 1 | 0.63 |
J. Sandrini | 14 | 1 | 0.63 |
R. Berthelon | 15 | 1 | 0.63 |
JC. Grenier | 16 | 1 | 0.63 |
O. Weber | 17 | 1 | 0.63 |
D. Turgis | 18 | 1 | 0.63 |
A. Valery | 19 | 1 | 0.63 |
S. Del Medico | 20 | 1 | 0.63 |
V. Caubet | 21 | 1 | 0.63 |
JP. Reynard | 22 | 1 | 0.63 |
D. Dutartre | 23 | 1 | 0.63 |
L. Favennec | 24 | 1 | 0.63 |
A. Conte | 25 | 1 | 0.63 |
F. Disegni | 26 | 6 | 2.37 |
M. De Tomasi | 27 | 1 | 0.63 |
A. Ventre | 28 | 3 | 1.45 |
M. Baldo | 29 | 1 | 0.63 |
D. Ielmini | 30 | 1 | 0.63 |
A. Maurelli | 31 | 3 | 1.45 |
P. Ferreira | 32 | 3 | 1.12 |
F. Arnaud | 33 | 1 | 0.63 |
F. Piazza | 34 | 1 | 0.63 |
P. Cappelletti | 35 | 3 | 1.79 |
R. Annunziata | 36 | 1 | 0.96 |
R. Gonella | 37 | 1 | 0.63 |