Name
Title | ||
|---|---|---|
A Calibration-Free In-Memory True Random Number Generator Using Voltage-Controlled MRAM |
Abstract | ||
|---|---|---|
In this paper, we propose an in-memory True Random Number Generator (TRNG) using Voltage-Controlled MRAM that doesn't require calibration of the writing pulse's width and amplitude. Previous solution using Spin Transfer Torque (STT) MRAM requires calibration for every MTJ, thus making the multi-row random number generation inside the memory impossible. We also propose a 100% relative throughput di... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/ESSDERC53440.2021.9631784 | ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) |
Keywords | DocType | ISSN |
Performance evaluation,Torque,Memory management,Europe,Writing,NIST,Throughput | Conference | 1930-8876 |
ISBN | Citations | PageRank |
978-1-6654-3748-6 | 0 | 0.34 |
References | Authors | |
0 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jiyue Yang | 1 | 0 | 0.68 |
| Di Wu | 2 | 0 | 0.68 |
| Albert Lee | 3 | 0 | 0.34 |
| Seyed Armin Razavi | 4 | 0 | 0.68 |
| Puneet Gupta | 5 | 0 | 0.34 |
| Kang L. Wang | 6 | 0 | 0.34 |
| Sudhakar Pamarti | 7 | 0 | 0.68 |