Abstract | ||
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Antimony (III) sulfide thin films are prepared on glass substrates by physical vapor deposition technique. Then, the films are annealed at different temperatures from 250 to 400°C with N2 and N2-S atmosphere. The effect of annealing temperature on the optoelectronic properties is investigated. The films are characterized by ultraviolet-visible spectroscopy, Raman spectroscopy... |
Year | DOI | Venue |
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2021 | 10.1109/CCE53527.2021.9633112 | 2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) |
Keywords | DocType | ISBN |
Sb3S2,Stibnite,chalcogenide,semiconductor material | Conference | 978-1-6654-0029-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 |
Name | Order | Citations | PageRank |
---|---|---|---|
J. Cruz-Gómez | 1 | 0 | 0.34 |
E. Hernández-Cantero | 2 | 0 | 0.34 |
D. Santos-Cruz | 3 | 0 | 0.34 |
S.A. Mayén-Hernández | 4 | 0 | 0.68 |
F. DeMoure-Flores | 5 | 0 | 0.34 |
J. Santos-Cruz | 6 | 0 | 0.68 |