Title
Optoelectronic properties of Sb 2 S 3 thin films grown by Physical Vapor Deposition
Abstract
Antimony (III) sulfide thin films are prepared on glass substrates by physical vapor deposition technique. Then, the films are annealed at different temperatures from 250 to 400°C with N2 and N2-S atmosphere. The effect of annealing temperature on the optoelectronic properties is investigated. The films are characterized by ultraviolet-visible spectroscopy, Raman spectroscopy...
Year
DOI
Venue
2021
10.1109/CCE53527.2021.9633112
2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
Keywords
DocType
ISBN
Sb3S2,Stibnite,chalcogenide,semiconductor material
Conference
978-1-6654-0029-9
Citations 
PageRank 
References 
0
0.34
0
Authors
6