Name
Title | ||
|---|---|---|
Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI |
Abstract | ||
|---|---|---|
The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This brief discusses the impact of the extended Forward Body-Biasing (FBB) feature in 28 nm FD-SOI technology on Ultra-Low Voltage (ULV) SCPA. A new model of the Drain Efficiency (DE) and System Efficiency (SE) including bo... |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/TCSII.2021.3088996 | IEEE Transactions on Circuits and Systems II: Express Briefs |
Keywords | DocType | Volume |
MOSFET,Analytical models,Transistors,Switches,Inverters,Integrated circuit modeling,Threshold voltage | Journal | 69 |
Issue | ISSN | Citations |
1 | 1549-7747 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Guillaume Tochou | 1 | 1 | 0.69 |
| Andreia Cathelin | 2 | 0 | 1.01 |
| Antoine Frappé | 3 | 0 | 0.34 |
| Andreas Kaiser | 4 | 73 | 23.35 |
| Jan M. Rabaey | 5 | 4796 | 1049.96 |