Name
Abstract | ||
|---|---|---|
RF reliability of 40-nm PDSOI nFET power amplifier (PA) cell at 26.5GHz is investigated. DC and RF stresses are applied in conducting and non-conducting hot carrier stress modes to study the PA cell RF and DC degradation behavior. The relationship between DC and large-signal RF performance under various RF stress conditions is investigated using DC and RF metrics. The degradation rate depends on R... |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/IRPS48227.2022.9764465 | 2022 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | DocType | ISBN |
Radio frequency,Degradation,Measurement,Shape,Power amplifiers,Silicon-on-insulator,Hot carriers | Conference | 978-1-6654-7950-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Aarti Rathi | 1 | 0 | 0.34 |
| Abhisek Dixit | 2 | 0 | 0.34 |
| P. Srinivasan | 3 | 0 | 0.34 |
| Oscar H. Gonzalez | 4 | 0 | 0.34 |
| Fernando Guarin | 5 | 0 | 0.34 |