Paper Info
Title
<italic>I</italic><sub>G</sub>- and <italic>V</italic><sub>GS</sub>-Dependent Dynamic <italic>R</italic><sub>ON</sub> Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs
Abstract
The dynamic on-resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> ) of two mainstream 600 V/650 V <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate contacts are characterized under the hard-switching condition and show strong dependences on the gate driving conditions under both double-pulse and multipulse testing modes. The statistical measurement of multiple samples indicates this is a representative phenomenon in these two types of commercial <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate power HEMTs. For Ohmic-type <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate HEMT, gate injection current ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ) at the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> state from the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate facilitates a faster detrapping process and contributes to a smaller dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> . For Schottky-type <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate HEMT, the dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> shows a strong dependence on the gate overdrive voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> ) because the higher <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> can compensate the increase in dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> induced by the positively shifted <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> under high drain bias. A larger <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> (from 1.2 to 22 mA) and higher <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> (from 5 to 7 V) play the most important role in suppressing the dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> under high switching frequency and high drain bias condition (i.e., 400 kHz/400 V), where the reduction of dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>r</small></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><small>ON</small></sub> is 13.6% and 17.1% for Ohmic-type and Schottky-type <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -GaN gate HEMTs, respectively.
Year
DOI
Venue
2022
10.1109/TIE.2021.3104592
IEEE Transactions on Industrial Electronics
Keywords
DocType
Volume
Active MOSFET-based voltage clamping circuit,double-/multipulse testing mode,hard switching,HD-GIT,IG- and VGS-dependent dynamic RON,Schottky-type p-GaN gate HEMT
Journal
69
Issue
ISSN
Citations 
8
0278-0046
0
PageRank 
References 
Authors
0.34
2
7
Name
Order
Citations
PageRank
Kailun Zhong100.34
Wei Jin2103.69
Jiabei He300.34
Sirui Feng400.34
Yuru Wang500.34
Yang Song67122.04
Kevin J. Chen7117.09