Title
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization
Abstract
The size and parameter optimization for the 5-nm carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) cell was presented in Part I of this article. Based on that work, we propose a carbon nanotube (CNT) SRAM array composed of the schematically optimized CNFET SRAM and CNT interconnects. We consider the interconnects inside the CNFET SRAM cell composed of metallic sing...
Year
DOI
Venue
2022
10.1109/TVLSI.2022.3146064
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
DocType
Volume
CNTFETs,Layout,Integrated circuit interconnections,FinFETs,Metals,SRAM cells,Electrodes
Journal
30
Issue
ISSN
Citations 
4
1063-8210
0
PageRank 
References 
Authors
0.34
0
12
Name
Order
Citations
PageRank
Rongmei Chen101.01
Lin Chen200.68
Jie Liang300.68
Yuan-Qing Cheng4338.77
Souhir Elloumi500.34
J. Lee601.01
Kangwei Xu700.68
Vihar P. Georgiev803.04
Kai Ni962.93
Peter Debacker10329.04
A. Asenov112415.23
Aida Todri-Sanial124612.58