Name
Abstract | ||
|---|---|---|
Implementing stateful logic based on memristors is a promising approach for the development of a highly efficient in-memory computing paradigm, wherein the data transmission between the controller and memory is largely alleviated. However, the deviation of the electrical behavior of memristors causes errors in the execution process of the stateful logic. Consequently, a reliability issue arises that must be carefully addressed. Here, a method of error detection and correction (EDC) based on memristor-based stateful logic operation is proposed for the IMP stateful logic gate (PMR-two-2IMP). Leveraging the concept of redundancy, error detection is achieved with the assistance of a stateful NOR logic gate, while a composite stateful OR logic gate is used for error correction. In the simulated validation, the concept of redundancy is employed to improve the accuracy of EDC. Finally, the feasibility of the proposed method for practical devices (TiN/TaO x /HfO x /TiN) is demonstrated using a circuit platform equipped with a 1T1R crossbar array. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1002/aisy.202100234 | ADVANCED INTELLIGENT SYSTEMS |
Keywords | DocType | Volume |
error correction, IMP logic gate, in-memory computing, memristors, stateful memristor gates | Journal | 4 |
Issue | Citations | PageRank |
5 | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zhiwei Li | 1 | 1315 | 107.73 |
| Hongchang Long | 2 | 0 | 0.34 |
| Xi Zhu | 3 | 0 | 2.03 |
| Yinan Wang | 4 | 27 | 9.85 |
| Haijun Liu | 5 | 0 | 0.34 |
| Qingjiang Li | 6 | 0 | 0.34 |
| Nuo Xu | 7 | 0 | 0.34 |
| Hui Xu | 8 | 0 | 1.35 |