Title
2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory
Abstract
This article presents a low random noise, a low-power, and a high-speed 2-mega pixels (Mp) global-shutter (GS)-type CMOS image sensor (CIS) using an advanced dynamic random access memory (DRAM) technology. GS CIS is one of the alternatives to solve image distortion issues caused by a conventional rolling-shutter (RS) CIS operation, since a 2-D image data can be simultaneously sampled by the in-pix...
Year
DOI
Venue
2022
10.1109/JSSC.2022.3142436
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Substrates,Random access memory,Capacitors,Sensor arrays,Power demand,Integrated circuit interconnections,Wideband
Journal
57
Issue
ISSN
Citations 
4
0018-9200
1
PageRank 
References 
Authors
0.36
0
25