Paper Info
Title
A Doherty Power Amplifier With Extended High-Efficiency Range Using Three-Port Harmonic Injection Network
Abstract
In this paper, a Doherty power amplifier (DPA) using a novel three-port harmonic injection network (HIN) to extend its high-efficiency range is proposed. With the help of a part of the three-port HIN, which is placed between the carrier and peaking branches, the optimal drain fundamental frequency termination for the carrier device at back-off and saturation can be realized simultaneously thus enhancing the efficiency at back-off significantly. Meanwhile, this three-port HIN can also realize second harmonic drain terminations for the carrier and peaking device with the quasi-open and quasi-short circuit at the current plane, respectively. Consequently, the saturated power ratio between peaking and carrier devices is increased, which further extends the back-off range of the asymmetric drain-biased DPA. For demonstration purposes, an extended high efficiency range DPA was designed and fabricated using commercially available GaN HEMT (Cree CGH 40010F) devices. Measured results for this novel idea gave drain efficiencies better than 62.5% at 9-9.5 dB back-off point from 1.60 to 1.95 GHz.
Year
DOI
Venue
2022
10.1109/TCSI.2022.3160382
IEEE Transactions on Circuits and Systems I: Regular Papers
Keywords
DocType
Volume
Doherty power amplifier,GaN-based FETs,high efficiency range,high efficiency amplifier,harmonic injection
Journal
69
Issue
ISSN
Citations 
7
1549-8328
0
PageRank 
References 
Authors
0.34
14
6
Name
Order
Citations
PageRank
Xinyu Zhou100.34
Wing Shing Chan26810.55
Tushar Sharma300.34
Jing Xia46611.85
Shichang Chen501.69
Wenjie Feng64512.75