Paper Info
Title
Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Abstract
Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
Year
DOI
Venue
2022
10.1007/s11432-021-3398-y
Science China Information Sciences
Keywords
DocType
Volume
heterogeneous integration, InP/Si, GaSb/Si, MBE, ion-slicing technique, selective chemical etching
Journal
65
Issue
ISSN
Citations 
8
1674-733X
0
PageRank 
References 
Authors
0.34
3
13
Name
Order
Citations
PageRank
Tingting Jin1102.04
Jiajie Lin200.34
Tiangui You320.79
Xiaolei Zhang400.34
Hao Liang500.34
Yifan Zhu610.69
Jialiang Sun700.34
Hangning Shi800.34
Chaodan Chi900.34
Min Zhou1000.34
Robert Kudrawiec1100.34
Shumin Wang1200.34
Xin Ou1320.79