Title
Performance Modeling Sparse MTTKRP Using Optical Static Random Access Memory on FPGA
Abstract
Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast, energy-efficient static random memory has yet to be achieved with E-SRAM technology. However, preliminary research into optical static random access memory (O-SRAM) has shown promising results in creating energy-efficient ultra-fast static memories. This paper investigates the advantage of O-SRAM over E-SRAM in access speed and energy performance while exe-cuting sparse Matricized Tensor Times Khatri-Rao Product (spMTTKRP). spMTTKRP is an essential component of tensor decomposition algorithms which is heavily used in data science applications. The evaluation results show O-SRAMs can achieve speeds of 1.1 × − 2.9 × while saving 2.8 × − 8.1 × energy compared to conventional E-SRAM technology.
Year
DOI
Venue
2022
10.1109/HPEC55821.2022.9926407
2022 IEEE High Performance Extreme Computing Conference (HPEC)
Keywords
DocType
ISSN
Optical Static Random Access Memory,energy efficiency,spMTTKRP,Memory Systems,FPGA,Tensor Decom-position
Conference
2377-6943
ISBN
Citations 
PageRank 
978-1-6654-9787-9
0
0.34
References 
Authors
6
5
Name
Order
Citations
PageRank
Sasindu Wijeratne100.34
Akhilesh Jaiswal200.34
Ajey P. Jacob300.34
Bingyi Zhang400.34
Viktor K. Prasanna57211762.74