Paper Info
Title
Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device
Abstract
A normally- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> SiC-JFET/GaN-HEMT cascode device is recently proposed, featuring a cascode configuration that incorporates a high-voltage (HV, e.g., 1200 V) silicon-carbide (SiC) junction field effect transistor (JFET) delivering the HV blocking capability and a low-voltage (LV) enhanced-mode (E-mode) gallium-nitride (GaN) high electron mobility transistor (HEMT) providing the normally- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> gate control. This all-wide-bandgap device exhibits superior thermal stability and high switching speed compared to its counterparts, e.g., the SiC/Si cascode device. In this article, we study short-circuit (SC) characteristics of a 1200-V/80-mΩ SiC/GaN cascode device by considering the interactions between the SiC and GaN devices. The single-event SC withstand time (SCWT) of the demonstrated SiC/GaN cascode device is tested to be ∼3 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> s under a dc-bus voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> ) of 600 V when the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> gate voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-<small>on</small></sub> ) is set to 5 V. The SC failure occurs due to the formation of hot spots induced by thermal-runaway leakage currents inside the SiC JFET. The SCWT of the cascode device could be improved by applying a moderate <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-<small>on</small></sub> (e.g., SCWT = ∼6.5 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> s at <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-<small>on</small></sub> = 3.5 V under <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <small>v</small> </i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> = 600 V) without affecting the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <small>r</small> </i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <small>on</small></sub> ). However, it is identified that current oscillations tend to be triggered during the SC period when <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-<small>on</small></sub> is too low (e.g., lower than 3 V). The oscillation behavior is attributed to the energy stored in the interconnection parts between the SiC and GaN devices. The harmful oscillations could be suppressed by applying higher <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-<small>on</small></sub> , which drives the SiC JFET into low-transconductance mode by modulating the drain-to-source voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS-G</sub> ) of the LV GaN HEMT.
Year
DOI
Venue
2022
10.1109/TIE.2021.3135644
IEEE Transactions on Industrial Electronics
Keywords
DocType
Volume
Cascode configuration,E-mode gallium nitride high electron mobility transistor (GaN-HEMT),normally-off,oscillations,overvoltage,short circuit,silicon carbide (SiC) junction field effect transistor (JFET)
Journal
69
Issue
ISSN
Citations 
12
0278-0046
0
PageRank 
References 
Authors
0.34
6
4
Name
Order
Citations
PageRank
Gang Lyu111.40
Jiahui Sun200.68
Yuru Wang300.68
Kevin J. Chen4117.09