Name
Abstract | ||
|---|---|---|
High-efficiency power amplifiers (PAs) will be critical building-blocks for future sub-THz communications systems. InP heterojunction bipolar transistors (HBTs) with THz-class transistor bandwidth demonstrate PAs with high RF power density and high efficiency at frequencies between 100-300GHz. We review the performance of a state-of-the-art InP HBT IC technology and reported IC results that are applicable to future sub-THz communications systems. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/VLSITechnologyandCir46769.2022.9830311 | 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) |
Keywords | DocType | ISSN |
InP HBT,sub-THz,mmWave power amplifiers | Conference | 0743-1562 |
ISBN | Citations | PageRank |
978-1-6654-9773-2 | 0 | 0.34 |
References | Authors | |
0 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Urteaga | 1 | 16 | 7.43 |
| Z. Griffith | 2 | 0 | 0.34 |
| A. Arias-Purdue | 3 | 0 | 0.34 |
| A. Carter | 4 | 0 | 0.34 |
| P. Rowell | 5 | 0 | 0.34 |
| JONATHAN B. HACKER | 6 | 2 | 1.65 |
| B. Brar | 7 | 0 | 0.34 |