Title
An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset
Abstract
Sense amplifiers (SA) are facing increasing offset problems and amplifying problems due to mismatch of transistors and variations. This paper presents a structure that cancels the offset which is based on the delay and offset relation. The proposed structure can measure the delay of an SA due to its own offset voltage, and convert it into the length of a correction signal. The correction signal discharges the input of the SA, which reduces the voltage of the input to cancel the offset of the SA. The proposed technique can be applied to both the conventional latch-type SA (CLSA) and the current-latched SA with an NMOS footswitch (CSANF). The schematic simulations based on the 28 nm complementary metal-oxide semiconductor process show that the proposed technique can achieve a more centralized offset distribution than the CLSA and the CSANF. Moreover, the offset voltage of the two types SA can be reduced by 71.42% and 65.95%, respectively.
Year
DOI
Venue
2022
10.1016/j.mejo.2022.105578
Microelectronics Journal
Keywords
DocType
Volume
Sense amplifier (SA),Static random access memory (SRAM),Offset voltage
Journal
128
ISSN
Citations 
PageRank 
0026-2692
0
0.34
References 
Authors
0
8
Name
Order
Citations
PageRank
Yue Zhao100.34
Jinkai Wang200.34
Zhongzhen Tong300.34
Xiulong Wu452.78
Chunyu Peng500.34
Wenjuan Lu600.34
Qiang Zhao722.75
Zhiting Lin8112.67