Name
Abstract | ||
|---|---|---|
Solid-state drives (SSDs) that adopt NAND flash memory have become one of the most popular storages. With the progress of the manufacturing process, a page size of NAND flash memory has increased from 512B to 16KB recently. However, an I/O request of current file systems could be based on a 4KB sector. Due to the difference between the 16KB page and the 4KB sector, there will be subpage writes in the NAND flash memory. In the paper, we will propose an integrated subpage-aware write method to solve the incompleteness of the previous studies and reduce the overhead of subpage writes. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/NVMSA56066.2022.00018 | 2022 IEEE 11th Non-Volatile Memory Systems and Applications Symposium (NVMSA) |
Keywords | DocType | ISSN |
Subpage Write,NAND Flash Memory,Solid-State Drives (SSDs) | Conference | 2575-2561 |
ISBN | Citations | PageRank |
978-1-6654-5079-9 | 0 | 0.34 |
References | Authors | |
9 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chin-Hsien Wu | 1 | 419 | 47.93 |
| Chian-Shiang Ou Yang | 2 | 0 | 0.34 |