Name
Title | ||
|---|---|---|
Exploring Different Circuit-level Approaches to the Forming of Resistive Random Access Memories |
Abstract | ||
|---|---|---|
Advances in emerging resistive random-access memory (ReRAM) technology show promise to be used in future memory-centric computing systems. In ReRAM arrays that consist of two-terminal bipolar resistive switching (RS) devices, SET/RESET programming voltage pulses are used to switch them from low resistance state (LRS) to high resistance state (HRS). The recent commercialization of discrete and crossbar-array organized RS devices have certainly pushed forward experimentation with such emerging memory technology. One barrier still preventing their widespread practical use is the behavioral variability and the lack of a straightforward manner to implement the forming process and achieve uniform SET/RESET programing. In this paper, different circuit topologies and approaches are explored to perform the forming of the conductive channel in commercial discrete RS devices by Knowm Inc. A target-resistance is pursued through pulsed voltage stress, followed by cycle-to-cycle stabilization using a custom transimpedance amplifier circuit. Moreover, a voltage controlled low–current source is proposed as an approach to alleviate the complexity and risk of the forming process in device characterization. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/MOCAST54814.2022.9837684 | 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) |
Keywords | DocType | ISBN |
memristor,resistive switching,resistive RAM,ReRAM,characterization,Knowm,conductive channel forming | Conference | 978-1-6654-6718-6 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Albert Cirera | 1 | 0 | 0.34 |
| Carlos Fernandez | 2 | 2 | 1.87 |
| Ioannis Vourkas | 3 | 0 | 1.35 |
| Antonio Rubio | 4 | 0 | 0.68 |