Name
Abstract | ||
|---|---|---|
Ultrathin indium tin oxide (ITO) transistors have shown good performance, with effective mobility
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu_{\text{eff}}\sim 55\text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$</tex>
[1]. Due to their wide band gap (>3 eV), low-temperature large-area deposition, low off- and high on-state current, they are promising candidates for back-end of the line (BEOL) and 3D integration [1], [2]. However, all ITO transistors to date have back-gated (BG) structures, and the effect of top dielectrics or capping layers is unknown. Here, we demonstrate the first top-gated (TG) ITO transistors while successfully passivating the channel during TG dielectric layer deposition. We compare different precursors for atomic layer deposition (ALD) of the passivation layer and their role on device behavior. Ozone-based ALD minimizes the negative shift in threshold voltage
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\mathrm{T}})$</tex>
at short channel lengths and achieves
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\max}\approx 260\mu \mathrm{A}/\mu \mathrm{m}$</tex>
at VDS =1 V, on/off current ratio of
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 10^{10}$</tex>
for
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L\approx 700$</tex>
nm channel. Our TG ITO transistors have
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu_{\text{eff}}\approx 60\text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$</tex>
. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/DRC55272.2022.9855811 | 2022 Device Research Conference (DRC) |
Keywords | DocType | ISSN |
first demonstration,top-gated ITO transistors,channel passivation,ultrathin indium tin oxide transistors,effective mobility,wide band gap,on-state current,dielectrics,capping layers,atomic layer deposition,passivation layer,short channel lengths,$L\approx 700$ nm channel,TG ITO transistors,electron volt energy 3.0 eV,voltage 1.0 V | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-6654-9884-5 | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sumaiya Wahid | 1 | 0 | 0.34 |
| Alwin Daus | 2 | 0 | 0.34 |
| Jimin Kwon | 3 | 0 | 0.34 |
| Shengjun Qin | 4 | 0 | 0.34 |
| Jung-Soo Ko | 5 | 0 | 0.34 |
| Krishna C. Saraswat | 6 | 186 | 30.79 |
| H.-S. Philip Wong | 7 | 0 | 0.34 |
| Eric Pop | 8 | 50 | 12.07 |