Name
Abstract | ||
|---|---|---|
Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe
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) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe
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device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe
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-based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/DRC55272.2022.9855787 | 2022 Device Research Conference (DRC) |
Keywords | DocType | ISSN |
nonvolatile resistive,transition metal dichalcogenides,TMDCs,neuromorphic computing applications,complementary metal-oxide-semiconductor back-end-of-line compatible temperatures,long-term stability,multilayer device,free RS,CMOS-compatible electrodes,low switching fields,electrode materials,crosspoint memristors,two-dimensional materials,2D materials,preliminary proof-of-concept characteristics,Au,PtSe2 | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-6654-9884-5 | 0 | 0.34 |
References | Authors | |
0 | 11 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Dennis Braun | 1 | 0 | 0.34 |
| Sebastian Lukas | 2 | 0 | 0.68 |
| Lukas Völkel | 3 | 0 | 0.34 |
| Oliver Hartwig | 4 | 0 | 0.34 |
| Maximilian Prechtl | 5 | 0 | 0.34 |
| Melkamu Belete | 6 | 0 | 0.34 |
| Satender Kataria | 7 | 0 | 0.34 |
| Thorsten Wahlbrink | 8 | 0 | 0.34 |
| Alwin Daus | 9 | 0 | 0.34 |
| Georg S. Duesberg | 10 | 2 | 2.54 |
| Max C. Lemme | 11 | 0 | 0.34 |