Name
Title | ||
|---|---|---|
An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs |
Abstract | ||
|---|---|---|
In this paper, a method to improve the electrostatic discharge (ESD) ability of high-voltage P-channel laterally diffused MOSFET (pLDMOS) is proposed, that is, the use of drain-side parasitic silicon controlled rectifier (SCR) to change the N
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>
area modulation. By using the transmission-line pulse (TLP) testing machine, it can be found from the snapback I-V curve, the trigger voltage (V
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t1</inf>
) will decrease proportionally from 79.3 V to 36.2 V. And the holding voltage (V
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</inf>
) significantly decreased from 79.3 V to 4.2 V. Due to the increase of the N
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>
doping area, the characteristics of SCR will be obvious with the increase of the area. Meanwhile, the secondary breakdown current (It2) of 9 A will be compared to the reference device of 1.48 A. Therefore, this modulation technique is greatly improved the ESD immunity of high voltage pLDMOS. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/ICCE-Taiwan55306.2022.9869111 | 2022 IEEE International Conference on Consumer Electronics - Taiwan |
Keywords | DocType | ISSN |
ESD-enhancement,SCR area modulation,electrostatic discharge ability,high-voltage P-channel,laterally diffused MOSFET,drain-side parasitic silicon,rectifier,transmission-line pulse testing machine,TLP,snapback I-V curve,trigger voltage,holding voltage,doping area,modulation technique,ESD immunity,high voltage pLDMOS,current 9.0 A,current 1.48 A,voltage 36.2 V to 79.3 V,voltage 4.2 V to 79.3 V | Conference | 2575-8276 |
ISBN | Citations | PageRank |
978-1-6654-7051-3 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zhi–Wei Liu | 1 | 0 | 0.34 |
| Shen–Li Chen | 2 | 0 | 0.34 |
| Jhong–Yi Lai | 3 | 0 | 0.34 |
| Xing–Chen Mai | 4 | 0 | 0.34 |
| Yu–Jie Chung | 5 | 0 | 0.34 |